Semiconductor device and method of providing regions of low substrate capacitance
AssigneeSemiconductor Components Industries, LLC
InventorsGuy E. Averett, Keith G. Kamekona, Chandrasekhara Sudhama, Weizhong Cai, Gordon L. Bratten, Bladimiro Ruiz JR.
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Abstract
A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.
Claims25
A semiconductor device, comprising:
- a semiconductor substrate having a surface formed with a first recessed region;
- a first dielectric material deposited in the first recessed region and formed with a second recessed region;
- and
- a second dielectric material thermally grown over the first dielectric material to seal the second recessed region.
A method of making a semiconductor device, comprising the steps of:
- masking a material to form dielectric pillars in a recessed region;
- and
- oxidizing a cap layer to form a seal over regions between the dielectric pillars.
A method of fabricating an integrated circuit, comprising the steps of:
- etching a first dielectric material deposited within a recessed region to form dielectric pillars;
- growing a second dielectric material to form a seal over the dielectric pillars;
- and
- forming a passive component over the second dielectric material.
Dependencies are inferred from the claim text.