Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device

A semiconductor device comprising:

• a substrate;
• a plurality of transistor elements formed on the substrate;
• an interconnect layer formed over the transistor elements;
• a first nitride layer below the interconnect layer having a first air portions;
• a second nitride layer on the interconnect layer having a second air portions;
• and
• a protective layer over the second nitride layer.

A method of manufacturing the semiconductor device having a substrate, a plurality of transistor elements formed on the substrate, an interconnect layer formed over the transistor elements, a first nitride layer below the interconnect layer having a first air portions, a second nitride layer on the interconnect layer having a second air portions, and a protective layer over the second nitride layer,

• the method comprising:
• forming the first nitride layer without the first air portions and the second nitride layer without the second air portions;
• implanting hydrogen into corresponding portions of the nitride layers, the corresponding portions being the first and the second air portions to be made;
• and
• irradiating plasma containing excited oxygen to the nitride layers to remove the corresponding portions thereby making the first and the second air portions in the nitride layers.