Metal pad of a semiconductor element
AssigneeVIA Technologies, Inc.
InventorRay Chien
Life of this patent
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Abstract
A metal pad of a semiconductor element is disposed in an opening of a passivation layer of the semiconductor element and is connected to a metal interconnect layer of the semiconductor element through a plurality of metal plugs. The metal pad comprises a first aluminum alloy layer, a laser stop layer and a second aluminum alloy layer. The first aluminum alloy layer is disposed above the metal plugs; the laser stop layer is disposed on the upper surface of the first aluminum alloy layer and is made of a metal having a high melting point and a high laser reflection coefficient and has a thickness between 500 Å and 5000 Å; and the second aluminum alloy layer is disposed on the upper surface of the laser stop layer and has a thickness between 1000 Åand 20000 Å.
Claims20
A metal pad of a semiconductor element, disposed in an opening of a passivation layer of said semiconductor element, and connected to a metal interconnect layer of said semiconductor element through a plurality of metal plugs;
- said metal pad comprising:
- a first aluminum alloy layer, disposed above said metal plugs;
- a laser stop layer, disposed on the upper surface of said first aluminum alloy layer, made of a metal having a high melting point and a high laser reflection coefficient, and having a thickness between 500 Å and 5000 Å;
- and
- a second aluminum alloy layer, disposed on the upper surface of said laser stop layer and having a thickness between 1000 Å and 20000 Å.
A metal pad of a semiconductor element, disposed in an opening of a passivation layer of said semiconductor element, and connected to a metal interconnect layer of said semiconductor element through a plurality of metal plugs;
- said metal pad comprising:
- a first copper layer, disposed on the upper surface of said metal plugs, wherein the upper surface of said first copper layer is a curved surface;
- a laser stop layer, disposed on the upper surface of said first copper layer, made of a metal having a high melting point and a high laser reflection coefficient, and having a thickness between 500 Å and 5000 Å, wherein the upper and lower surfaces of said first copper layer are curved surfaces;
- and
- a second copper layer, disposed on the upper surface of said laser stop layer and having a thickness between 1000 Å and 20000 Å, wherein the lower surface of said second copper layer is a curve surface.
A metal pad of a semiconductor element, disposed in an opening of a passivation layer of said semiconductor element, and connected to a metal interconnect layer of said semiconductor element through a plurality of metal plugs;
- said metal pad comprising:
- a first copper layer, disposed on the upper surface of said metal plugs, wherein the upper surface of said first copper layer is a curved surface;
- and
- a laser stop layer, disposed on the upper surface of said first copper layer, made of a metal having a high melting point and a high laser reflection coefficient, and having a thickness between 500 Å and 10000 Å, wherein the lower surface of said first copper layer is a curved surface.
Dependencies are inferred from the claim text.