Semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkira Inoue, Takeshi Takagi, Yoshihiro Hara, Minoru Kubo
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Abstract
A semiconductor layer 30 of a graded SiGe-HDTMOS is constructed of an upper Si film 12, an Si buffer layer 13, an Si1−xGex film 14 and an Si cap layer 15. The region between a source region 20a and drain region 20b of the semiconductor layer 30 includes a high concentration n-type Si body region 22 and an n Si region 23, an Si cap region 25 and an SiGe channel region 24. A Ge composition ratio x of the Si1−xGex film 14 is made to increase from the Si buffer layer 13 to the Si cap layer 15. For the p-type HDTMOS, the electron current component of the substrate current decreases.
Claims15
A semiconductor device comprising:
- a semiconductor layer including at least a first semiconductor film and a second semiconductor film which has a band gap different from that of said first semiconductor and is constructed in such a way that the band gap is reduced from a location adjacent to said first semiconductor film in a direction away from the first semiconductor film;
- a gate insulating film provided on said semiconductor layer;
- a gate electrode provided on said gate insulating film;
- a source region and a drain region formed in regions located at both sides of said gate electrode of said semiconductor layer by introducing a first conductive type impurity;
- a channel region formed in a region located between said source region and drain region of said second semiconductor film by introducing a second conductive type impurity;
- a body region formed in the region located between said source region and drain region of said second semiconductor film by introducing the second conductive type impurity having higher concentration than that of said channel region;
- and
- a conductive member for electrically connecting said gate electrode and said body region.
A semiconductor device comprising:
- a semiconductor layer including at least a first semiconductor film, a second semiconductor film which is provided on said first semiconductor film and has a smaller potential with respect to carriers at the edge of a band where carriers run than that of said first semiconductor and a third semiconductor film sandwiched between said first semiconductor film and said second semiconductor film;
- a gate insulating film provided on said semiconductor layer;
- a gate electrode provided on said gate insulating film;
- a source region and a drain region formed in regions located at both sides of said gate electrode of said semiconductor layer by introducing a first conductive type impurity;
- a channel region formed in a region located between said source region and drain region of said second semiconductor film by introducing a second conductive type impurity;
- a body region formed in the region located between said source region and drain region of said second semiconductor film by introducing the second conductive type impurity having higher concentration than that of said channel region;
- a buffer region containing a second conductive type impurity having lower concentration than that of said body region or an undoped buffer region which is provided in a region located between said source region and drain region of said third semiconductor film;
- and
- a conductive member for electrically connecting said gate electrode and said body region.
Dependencies are inferred from the claim text.