Bipolar transistor manufacturing method
AssigneeSTMicroelectronics S.r.l.
InventorsYvon Gris, Thierry Schwartzmann
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Abstract
A method of manufacturing a bipolar transistor in a P-type substrate, including the steps of forming in the substrate a first N-type area; forming by epitaxy a first silicon layer; forming in this first layer, and substantially above the first area a second heavily-doped P-type area separate from the second area; forming at the periphery of this second area a third N-type area; forming by epitaxy a second silicon layer; forming a deep trench crossing the first and second silicon layers, penetrating into the substrate and laterally separating the second area from the third area; and performing an anneal such that the dopant of the third area is in continuity with that of the first area.
Claims22
A bipolar PNP-type transistor formed in two successive epitaxial layers on a P-type substrate, including:
- in a central portion of the PNP-type bipolar transistor a first N area diffused in the P-type substrate, a second P+ area formed in a first epitaxial layer of the two successive epitaxial layers, an N base and P+ emitter structure formed in a second epitaxial layer of the two successive epitaxial layers;
- a first ring-shaped trench crossing the two successive epitaxial layers and penetrating into the P-type substrate, the second P+ area being laterally delimited by the first ring-shaped trench, the first N area extending at least partially under the first ring-shaped trench;
- and
- outside the first ring-shaped trench, a third N+ area formed in the first epitaxial layer and contacting the first N area.
A semiconductor device formed on a substrate of a first conductivity type, comprising:
- a first region of a second conductivity type formed in the substrate;
- a first epitaxial layer formed on the substrate;
- a second region of the second conductivity type formed in the first epitaxial layer;
- a second epitaxial layer formed on the first epitaxial layer;
- a well of the first conductivity type formed in the second epitaxial layer;
- and
- a third region of the second conductivity type formed in the well.
A circuit including a first semiconductor device and a second semiconductor device formed on a substrate of a first conductivity type, comprising:
- a first region of a second conductivity type in the substrate;
- a first epitaxial layer on the substrate;
- a second region of the second conductivity type in the first epitaxial layer;
- a third region of the first conductivity type in the first epitaxial layer;
- a second epitaxial layer on the first epitaxial layer;
- a fourth region of the first conductivity type in the second epitaxial layer;
- a fifth region of the second conductivity type in the second epitaxial layer;
- a first well of the first conductivity type in the second epitaxial layer;
- a second well of the second conductivity type in the second epitaxial layer;
- a sixth region of the first conductivity type in the second well;
- and
- a seventh region of the second conductivity type in the first well,
- wherein the first region, third region, fourth region, second well and sixth region comprise the first semiconductor device, and the second region, fifth region, first well and seventh region comprise the second semiconductor device.
Dependencies are inferred from the claim text.