Antiferromagnetically stabilized pseudo spin valve for memory applications
AssigneeMicron Technology, Inc.
InventorsRomney R. Katti, Joel A. Drewes, Timothy J. Vogt
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Abstract
The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.
Claims17
An antiferromagnetically stabilized pseudo spin valve (ASPSV) in a magnetic random access memory (MRAM) comprising:
- a hard layer of ferromagnetic material;
- a soft layer of ferromagnetic material;
- a spacer layer of non-ferromagnetic material disposed between the hard layer and the soft layer;
- and
- an antiferromagnetic layer disposed adjacent to the soft layer, where the antiferromagnetic layer is also disposed on a side of the soft layer that is opposite to the hard layer.
An antiferromagnetically stabilized pseudo spin valve (ASPSV) in a magnetic random access memory (MRAM) comprising:
- a hard layer of ferromagnetic material adapted to store data in a magnetic orientation;
- a soft layer of ferromagnetic material adapted to switch orientation to allow data to be read from the hard layer;
- a spacer layer of non-ferromagnetic material disposed between the hard layer and the soft layer;
- an antiferromagnetic layer disposed on a side of the soft layer that is opposite to the hard layer;
- and
- an AFM interlayer disposed between the soft layer and the antiferromagnetic layer, where the AFM interlayer is not formed from an antiferromagnetic material.
A method of stabilizing a pseudo spin valve (PSV) comprising:
- providing a magnetoresistive sandwich that includes a soft layer and a hard layer;
- and
- forming an antiferromagnetic layer on the magnetoresistive sandwich near to the soft layer and on a side of the soft layer that is opposite to the hard layer.
Dependencies are inferred from the claim text.