Gate electrode and method of fabricating the same

Abstract

There is provided a method of fabricating a gate electrode, including the steps of (a) forming a gate oxide film at a surface of a semiconductor substrate, (b) forming a multi-layered structure on the gate oxide film, the multi-layered structure including a polysilicon layer formed on the gate oxide film, a refractive metal silicide layer formed on the polysilicon layer, and a silicon nitride layer formed on the refractive metal silicide layer, (c) thermally annealing the multi-layered structure in a nitrogen atmosphere to thereby form a silicon nitride film on sidewalls of the polysilicon layer and the refractive metal silicide layer, and (d) oxidizing the semiconductor substrate and the multi-layered structure.

Dependencies are inferred from the claim text.