Group III-V compound semiconductor and group III-V compound semiconductor device using the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToshikazu Onishi
Life of this patent
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Abstract
An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.
Claims37
A method for manufacturing a group III-V compound semiconductor device, comprising:
- a first step of forming a first semiconductor layer made of AlaGabIn1−a−bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- and
- a second step of forming a second semiconductor layer made of AlcGa1−cAs (where 0≦c≦1) on the first semiconductor layer,
- wherein in the first step, a Ga content b of the first semiconductor layer is small.
A group III-V compound semiconductor device, comprising:
- a first semiconductor layer made of AlaGabIn1−a−bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- and
- a second semiconductor layer made of AlcGa1−cAs (where 0≦c≦1) formed on the first semiconductor layer,
- wherein a Ga content b in the first semiconductor layer is 0.35 or less.
A group III-V compound semiconductor device, comprising:
- a first semiconductor layer made of AlaGabIn1−a−bP (where 0≦a≦1, 0≦b≦1, 0a+b≦1);
- a buffer layer made of AlxGayIn1−x−yP (where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) formed on the first semiconductor layer;
- and
- a second semiconductor layer made of AlcGa1−cAs (where 0≦c≦1) formed on the buffer layer,
- wherein a Ga content y in the buffer layer is smaller than a Ga content b in the first semiconductor layer.
A method for manufacturing a group III-V compound semiconductor device, comprising:
- a first step of forming a first semiconductor layer made of AlaGabIn1−a−bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- and
- a second step of forming a second semiconductor layer made of AlcGa1−cAs (where 0≦c≦1) on the first semiconductor layer,
- wherein in the second step, an Al content c of the second semiconductor layer is small.
A group III-V compound semiconductor device, comprising:
- a first semiconductor layer made of AlaGabIn1−a−bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- and
- a second semiconductor layer made of AlcGa1−cAs (where 0≦c≦1) formed on the first semiconductor layer,
- wherein an Al content c in the second semiconductor layer is 0.3 or less.
A group III-V compound semiconductor device, comprising:
- a first semiconductor layer made of AlaGabIn1−a−bP (where 0≦a≦1, 0≦b≦1, 0≦a+b≦1);
- a buffer layer made of AlzGa1−zAs (where 0≦z≦1) formed on the first semiconductor layer;
- and
- a second semiconductor layer made of AlcGa1−cAs (where 0≦c≦1) formed on the buffer layer,
- wherein an Al content z in the buffer layer is smaller than an Al content c in the second semiconductor layer.
Dependencies are inferred from the claim text.