Light emitting device

A light emitting device comprising:

• a first insulating film comprising silicon nitride or silicon oxynitride;
• a semiconductor layer over the first insulating film;
• a gate insulating film over the semiconductor layer;
• a gate electrode over the gate insulating film;
• a second insulating film comprising silicon nitride or silicon oxynitride over the gate electrode;
• an organic resin interlayer insulating film over the second insulating film;
• a third insulating film comprising inorganic material comprising nitride over the organic resin interlayer insulating film;
• a partitioning layer comprising an inorganic insulating material comprising nitride over the third insulating film;
• a fourth insulating film comprising an inorganic insulating material comprising nitride over the third insulating film and the partitioning layer;
• a light emitting layer comprising an organic compound surrounded by the third insulating film, the fourth insulating film and the partitioning layer;
• and
• a cathode contacting the light emitting layer comprising an organic compound layer.

A light emitting device comprising:

• a first insulating film comprising silicon nitride or silicon oxynitride;
• a thin film transistor over the first insulating film comprising:
• a semiconductor layer over the first insulating film;
• a gate insulating film over the semiconductor layer;
• a gate electrode over the gate insulating film;
• a second insulating film comprising silicon nitride or silicon oxynitride over the gate electrode;
• a third insulating film comprising an inorganic insulating material comprising a nitride over the second insulating film;
• a partitioning layer comprising an inorganic insulating material comprising nitride over the third insulating film;
• a fourth insulating film comprising an inorganic insulating material comprising a nitride over the third insulating film and the partitioning layer;
• a light emitting layer comprising an organic compound surrounded by the third insulating film, the fourth insulating film and the partitioning layer;
• and
• a cathode contacting the light emitting layer comprising an organic compound layer.

A light emitting device comprising:

• a first insulating film comprising silicon nitride or silicon oxynitride;
• a thin film transistor comprising over the first insulating film:
• a semiconductor layer over the first insulating film;
• a gate insulating film over the semiconductor layer;
• a gate electrode over the gate insulating film;
• a second insulating film comprising silicon nitride or silicon oxynitride over the gate electrode;
• an organic resin interlayer insulating film over the second insulating film;
• a third insulating film comprising inorganic material comprising a nitride over the organic resin interlayer insulating film;
• a partitioning layer comprising an inorganic insulating material comprising nitride over the third insulating film;
• a fourth insulating film comprising an inorganic insulating material comprising a nitride over the third insulating film and the partitioning layer;
• a light emitting layer comprising an organic compound surrounded by the third insulating film, the fourth insulating film and the partitioning layer;
• and
• a cathode contacting the light emitting layer comprising an organic compound layer.