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AssigneeNissan Chemical Industries, Ltd.
InventorsSatoshi Takei, Ken-ichi Mizusawa, Yasuhisa Sone
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A composition for forming a gap-filling material for lithography which, as a gap-filling material for lithography superior in planarization ability on a substrate having irregularities such as holes or trenches, causing no intermixing with a resist layer, and having a high dry etching rate as compared with the resist, is used in producing semiconductor devices by a method using the gap-filling material to cover the resist on the substrate having holes having an aspect ratio, defined as height/diameter, of 1 or more to transfer images onto the substrate by utilization of lithographic process, the composition being used to coat the substrate prior to the coating of the resist so as to planarize the substrate surface, and the composition being characterized by containing a polymer solution consisting of a polymer and a solvent.
A composition for forming a gap-filling material to be used in production of a semiconductor device by a method of applying a resist for coating onto a substrate having holes where an aspect ratio defined as height/diameter is 1 or more and transferring an image on the substrate using a lithographic process, which is applied to the substrate prior to the coating with the resist so as to planarize the surface of the substrate, characterized by containing a polymer solution comprised of a polymer and a solvent.
The composition for forming a gap-filling material according to one of the claims 1 to 9, characterized in that the polymer comprises at least one repeating unit represented by the following Formula (1):
The composition for forming a gap-filling material according to the tenth aspect of the invention, characterized in that the polymer is poly p-vinylphenol that comprises a repeating unit represented by the following Formula (2):
The method of manufacturing a semiconductor device forming an integrated circuit element by transferring an image on a substrate, characterized by comprising:
The method of manufacturing a semiconductor device according to the nineteenth aspect of the invention, characterized by further comprising a step (A′) where a bottom anti-reflective coating is formed before or after the formation of a filling layer using the composition for forming a gap-filling material in the step (A).
Dependencies are inferred from the claim text.