Auger-based thin film metrology
AssigneeApplied Materials Israel Ltd.
InventorsAlexander Kadyshevitch, Avi Simon
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Abstract
Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements. The apparatus includes an electron gun, which directs a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed. An electron detector receives Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons. A controller receives the signal and analyzes the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film.
Claims30
Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements, the apparatus comprising:
- an electron gun, which is adapted to direct a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed;
- an electron detector, which is adapted to receive Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons;
- and
- a controller, which is coupled to receive the signal and to analyze the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film.
A cluster tool for producing microelectronic devices, comprising:
- a deposition station, which is adapted to form a thin film comprising first elements over an underlying layer on a surface of a semiconductor wafer, the underlying layer comprising second elements;
- a testing station, comprising:
- an electron gun, which is adapted to direct a beam of electrons to impinge on a point on the surface of wafer at which the thin film is formed;
- an electron detector, which is adapted to receive Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons;
- and
- a controller, which is coupled to receive the signal and to analyze the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film, and to adjust an operating parameter of the deposition station responsive to at least one of the composition and the thickness.
A method for production testing, comprising:
- receiving a sample comprising a thin film formed over an underlying layer on a surface of the sample, the thin film comprising first elements, while the underlying layer comprises second elements;
- directing an electron beam to impinge on a point on the surface of the sample at which the thin film is formed;
- receiving Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons;
- and
- analyzing a distribution of energies of the emitted electrons so as to determine a composition of the first elements in the thin film and a thickness of the thin film.
Dependencies are inferred from the claim text.