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AssigneeApplied Materials, Inc.
InventorsSivakami Ramanathan, Srinivas Gandikota, Deenesh Padhi, Chris McGuirk, Girish Dixit, Robin Cheung
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Embodiments of the invention provide a method of plating a copper film on a substrate in an electrochemical plating apparatus. The method includes positioning a substrate in an electrolyte solution, applying a current between the substrate and an anode to generate a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface, rotating the, substrate at a rotational speed of between about 20 rpm and about 50 rpm, and plating a copper film having a sheet resistance of less than about 16.5×10−2 Ohms/cm2. Embodiments of the invention further provide a copper film plated onto a semiconductor substrate, wherein the film has improved electromigration and stress characteristics
A method of plating a copper film on a substrate in an electrochemical plating apparatus, comprising:
A copper film having a sheet resistance of between about 10.5×10−2 Ohms/cm2 and about 16.5×10−2 Ohms/cm2 formed onto a semiconductor substrate via an electrochemical deposition process, wherein the process includes applying a current density to the substrate surface of between about 15 mA/cm2 and about 30 mA/cm2 during the process and rotating the substrate at between about 10 rpm and about 25 rpm during the process.
A copper layer formed on a semiconductor substrate, the copper layer comprising:
Dependencies are inferred from the claim text.