Method and apparatus for producing uniform process rates

A plasma processing apparatus for processing a substrate, comprising:

• a process chamber in which a plasma is both ignited and sustained for said processing;
• a multi-layered antenna configured to produce an electric field via RF energy inside said process chamber, said antenna having a first loop and a second loop, which are substantially similar to one another, and which are symmetrically aligned relative to an antenna axis, the first loop comprising:
• a first turn with a first turn gap wherein a first end of the first turn is on a first side of the first turn gap and a second end of the first turn is on a second side of the first turn gap;
• a second turn with a second turn gap wherein a first end of the second turn is on a first side of the second turn gap and a second end of the second turn is on a second side of the second turn gap, wherein the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn;
• and
• a first turn-second turn connector electrically connected between the second end of the first turn and the first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap;
• and
• a multi-layered window configured to allow the passage of said RF energy from said antenna to said process chamber, said window having a first layer and a second layer, said second layer being arranged to suppress capacitive coupling, which may occur between said plasma and said antenna.