Plasma CVD apparatus
AssigneeMitsubishi Heavy Industries, Ltd.
InventorsTadashi Shimazu, Masahiko Inoue
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Abstract
A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4 gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4 gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.
Claims3
A plasma CVD apparatus comprising:
- a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed;
- a high frequency bias unit which applies a high frequency bias for sputtering to the semiconductor wafer;
- a high frequency bias control unit which on/off-controls the high frequency bias;
- a gas supply unit which supplies gas containing at least hydrogen to the reaction container;
- and
- a gas supply control unit which on/off-controls supply of the gas based on an opposite control logic to a control logic of the high frequency bias control unit.
Dependencies are inferred from the claim text.