Cubic (zinc-blende) aluminum nitride and method of making same

A semiconductor device comprising:

• a Si(100) substrate;
• a layer of 3C—SiC on a first surface of the Si(100) substrate;
• and
• a film of single crystal epitaxial zinc-blende AlN on the layer of 3C—SiC, oriented epitaxial to the (100) plane.

A surface acoustic wave device comprising:

• a substrate;
• an epitaxial layer of cubic zinc-blende AlN deposited on the substrate;
• and
• electrodes on the surface of the epitaxial layer of cubic zinc-blende AlN for converting an electrical signal to a surface acoustic wave and for converting the generated surface acoustic wave into an electrical signal.

A method of preparing a single crystal, epitaxial AlN film on a substrate comprising the steps of:

• a) forming a plasma of high energy activated aluminum ions and activated nitrogen ion species by the application of pulsed d.c. power to a source of aluminum and nitrogen;
• b) exposing the substrate to a low energy flux of the plasma;
• and
• c) growing an epitaxial AlN film on the substrate at a temperature in the range of 300° C.-800° C.

A device for selectably depositing wurtzite or zinc-blende epitaxial films of Group III-V semiconductors on a substrate:

• a) a growth chamber;
• b) a substrate holder mounted in the growth chamber;
• c) a substrate bias power supply electrically connected to the substrate holder;
• d) an ultrahigh vacuum pump connected to the growth chamber;
• e) a heat source for the substrate;
• f) at least one plasma deposition source of high-energy target material within the growth chamber, the plasma deposition source comprising a magnetically-enhanced hollow cathode lined with target material;
• g) a source for supplying gaseous nitrogen and argon into the plasma deposition source;
• and
• h) a source of pulsed d.c. or r.f power electrically connected to the hollow cathode source for creating a plasma of high-energy aluminum, nitrogen, and argon species directed to impinge upon a growth surface of a substrate mounted to the substrate holder.