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US 2003/0143868 A1Published application
Method and apparatus for ionization film formation
AssigneeCanon Kabushiki Kaisha
InventorsHirohito Yamaguchi, Masahiro Kanai, Atsushi Koike, Katsunori Oya
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Abstract
A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
Claims16
An ionization film formation method for forming a deposited film, comprising:
- (a) forming at least one of excited helium atoms and helium ions by causing helium gas to collide with thermoelectrons;
- and
- (b) ionizing vaporized particles by colliding the vaporized particles with at least one of the excited helium atoms and helium ions.
An ionization film formation apparatus for forming a deposited film, comprising:
- a hot-cathode system having at least one filament, and defining an ionization space, wherein the at least one filament is configured to produce thermoelectrons;
- a positively charged grid positioned between each filament and the ionization space;
- and
- an ionization gas introduction device configured to introduce an ionization gas in at least one of (i) between the filament and the grid and (ii) upstream of the filament relative to the grid and the ionization space.
1 more element
Dependencies are inferred from the claim text.