Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

A method for fabricating a thermally stable ultralow-k film comprising the steps of:

• providing parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor;
• positioning a pre-processed wafer on a substrate chuck having an area between about 300 cm2 and about 800 cm2 and maintaining a gap between said wafer and a top electrode between about 1 cm and about 10 cm;
• flowing a first precursor gas comprising cyclic siloxane molecules into said PECVD reactor;
• flowing at least a second precursor gas comprising organic molecules with ring structures having C, H and O atoms;
• and
• depositing an ultralow-k film on said wafer in the presence of an inert gas.

A method for fabricating a thermally stable ultralow-k film comprising the steps of:

• providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor;
• positioning a wafer on a substrate chuck having an area between about 300 cm2 and about 800 cm2, and maintaining a gap between the wafer and a top electrode between about 1 cm and about 10 cm;
• flowing into said reactor over said wafer kept at a temperature between about 25° C. and about 400° C., a precursor gas of a cyclic siloxane at a flow rate between about 5 sccm and about 1000 sccm, and a second precursor gas of organic molecules at a flow rate between about 5 sccm and about 50,000 sccm, while keeping a pressure in said reactor between about 50 mTorr and about 5000 mTorr;
• depositing an ultralow-k film on said wafer under a RF power density between about 0.05 W/cm2 and about 4.0 W/cm2;
• and
• annealing said ultralow-k film at a temperature not less than about 300° C. for at least about 0.25 hour.

A method for fabricating a thermally stable ultralow-k film comprising the steps of:

• providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor;
• positioning a wafer on a substrate chuck having an area between about 500 cm2 and about 600 cm2, and maintaining a gap between the wafer and a top electrode between about 1 cm and about 7 cm;
• flowing a precursor gas of a cyclic siloxane into said reactor over said wafer kept at a temperature between about 60° C. and about 200° C. at a flow rate between about 25 sccm and about 200 sccm and a second precursor of organic molecules at a flow rate between about 25 sccm and about 10,000 sccm while keeping a pressure in said reactor between about 100 mTorr and about 3000 mTorr;
• depositing an ultralow-k film on said wafer under a RF power density between about 0.25 W/cm2 and about 4 W/cm2;
• and
• annealing said ultralow-k film at a temperature not less than about 300° C. for at least about 0.25 hour.