Post-planarization clean-up
AssigneeMicron Technology, Inc.
InventorMichael T. Andreas
Life of this patent
Estimating the term…
Abstract
Cleaning solutions for removing residuals from the surface of an integrated circuit device. Such cleaning solutions find particular application in the fabrication of a dual damascene structure following removal of excess portions of a silver-containing metal layer from a device surface. The cleaning solutions facilitate removal of particulate residuals as well as unremoved portions of the metal layer in a single cleaning process. The cleaning solutions are dilute aqueous solutions containing hydrogen peroxide and at least one acidic component and are substantially free of particulate material. Acidic components include carboxylic acids and their salts.
Claims24
A post-planarization cleaning solution, consisting essentially of:
- at least one acidic component selected from the group consisting of carboxylic acids and salts of carboxylic acids;
- hydrogen peroxide;
- water;
- and
- at least one water-soluble organic solvent.
A post-planarization cleaning solution, consisting essentially of:
- approximately 0.05 to 0.2 wt % of acidic components selected from the group consisting of hydroxy acids and salts of hydroxy acids;
- approximately 1 to 3 wt % of hydrogen peroxide;
- and
- an aqueous solvent containing water and at least one water-soluble organic solvent.
A post-planarization cleaning solution, consisting essentially of:
- approximately 0.05 to 0.2 wt % of dibasic ammonium citrate;
- approximately 1 to 3 wt % of hydrogen peroxide;
- and
- an aqueous solvent containing water and at least one water-soluble organic solvent.
A post-planarization cleaning solution, consisting essentially of:
- approximately 0.1 wt % of acidic components selected from the group consisting of hydroxy acids and salts of hydroxy acids;
- approximately 2 wt % of hydrogen peroxide;
- and
- an aqueous solvent containing water and at least one water-soluble organic solvent.
A post-planarization cleaning solution, consisting essentially of:
- approximately 0.1 wt % of dibasic ammonium citrate;
- approximately 2 wt % of hydrogen peroxide;
- and
- an aqueous solvent containing water and at least one water-soluble organic solvent.
A post-planarization cleaning solution, consisting essentially of:
- at least one acidic component selected from the group consisting of hydroxy acids and salts of hydroxy acids;
- hydrogen peroxide;
- water;
- and
- at least one water-soluble organic solvent selected from the group consisting of alcohols and glycols.
A post-planarization cleaning solution, consisting essentially of:
- approximately 0.05 to 0.2 wt % of dibasic ammonium citrate;
- approximately 1 to 3 wt % of hydrogen peroxide;
- water;
- and
- at least one water-soluble organic solvent selected from the group consisting of alcohols and glycols.
Dependencies are inferred from the claim text.