Loading patent…
OwnerAkira Sekiya, Katsuya Fukae +2inventors
InventorsAkira Sekiya, Katsuya Fukae, Yuki Mitsui, Ginjiro Tomizawa
Estimating the term…
This invention relates to gas compositions comprising fluorine-containing nitrogen compounds, which compositions are useful for cleaning the interior of reactors, such as those of CVD (chemical vapor deposition) equipment and also for etching films of silicon-containing compounds. Advantageously, the gas compositions are environmentally friendly and have little or no tendency to generate an effluent gas stream containing noxious ingredients, such as CF4, NF3 and the like. There are provided: a gas composition for cleaning the interior of film deposition chambers contaminated with silicic deposition, which comprises F3NO or combinations of F3NO with O2 and/or inert gas(es) or which comprises FNO or a combination of FNO with O2 and/or inert gas(es); and also a similar gas composition for etching films of silicon-containing compounds, e.g. films of semiconductive materials.
A gas composition for cleaning the interior of CVD chambers, which comprises F3NO.
A gas composition for cleaning the interior of CVD chambers, which comprises F3NO and O2.
A gas composition for cleaning the interior of CVD chambers, which comprises F3NO, O2 and one or more inert gases.
A gas composition for cleaning the interior of CVD chambers, which comprises F3NO and one or more inert gases.
A gas composition for cleaning the interior of CVD chambers, which comprises FNO and O2, the content of said FNO being in the range of 20-50 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
A gas composition for cleaning the interior of CVD chambers, which comprises FNO and one or more inert gases, the content of said FNO being in the range of 55-95 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
A gas composition for cleaning the interior of CVD chambers, which comprises FNO, O2 and one or more inert gases, the content of said FNO being in the range of 20-90 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO and O2.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO, O2 and an inert gas or gases.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises F3NO and an inert gas or gases.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises FNO and O2, the content of said FNO being in the range of 20-50 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds which gas composition comprises FNO and one or more inert gases, the content of said FNO being in the range of 55-95 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
A gas composition for etching a thin film comprising a silicon-containing compound or compounds, which gas composition comprises FNO, O2 and one or more inert gases, the content of said FNO being in the range of 20-90 mol % per 100 mol % of the total quantity of the gas ingredients in said composition.
Dependencies are inferred from the claim text.