Damascene copper electroplating process with low-pressure pre-processing

Abstract

A damascene copper electroplating process with low-pressure pre-processing for fabricating interconnect structures on wafers comprising the following steps: a. closing two control valves to stop circulation of a plating solution; b. conveying a wafer to be plated on a predetermined location in a hallow container; c. venting the hallow container until the pressure inside the hallow container reaching a pre-determined low pressure and then dipping the wafer into the plating solution; d. introducing external air until the pressure inside the hallow container reaching standard value; e. opening the two control valves to re-circulate the plating solution; f. repeating steps a to e for next wafer. The new process can reduce void defects and gap defects on wafers.

Dependencies are inferred from the claim text.