Interconnect structures in a semiconductor device and processes of formation
AssigneeIntel Corporation
InventorsMichael Kozhukh, Oleg Rashkovskiy
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Abstract
Processes for fabricating a semiconductor device are described herein. In one aspect of the invention, an exemplary process includes forming an interface layer overlying the device substrate, forming a silver layer overlying the interface layer, annealing the substrate to form an intermetallic layer between the silver layer and the interface layer, the silver layer is in intimate contact with the intermetallic layer, and forming a protection layer overlying the silver layer. Other interconnect structures and processes are also described.
Claims30
A process, comprising:
- providing a device substrate having a dielectric layer thereon;
- removing a portion of the dielectric layer to create an opening.
- forming an interface layer within the opening;
- forming a silver layer overlying the interface layer;
- and
- annealing the substrate to form an intermetallic layer between the silver layer and the interface layer, in which the silver layer is in intimate contact with the intermetallic layer.
A process, comprising:
- providing a device substrate;
- forming an interface layer overlying the device substrate;
- forming a silver layer overlying the interface layer;
- annealing the substrate to form an intermetallic layer between the silver layer and the interface layer, in which the silver layer is in intimate contact with the intermetallic layer;
- and
- forming a protection layer overlying the silver layer.
An interconnect structure, comprising:
- a device substrate;
- an interface layer overlying the device substrate;
- a silver layer overlying the interface layer;
- a protection layer overlying the silver layer;
- and
- a dielectric layer overlying the protection layer.
An interconnect structure, comprising:
- a device substrate;
- a dielectric layer overlying the device substrate, the dielectric layer having a cavity therein;
- an interface layer overlying the dielectric layer, the interface layer having a thickness insufficient to completely fill the cavity;
- and
- a silver layer overlying the interface layer, the silver layer having a thickness sufficient to completely fill the cavity.
Dependencies are inferred from the claim text.