Method of manufacturing semiconductor device

Abstract

It is an object to provide a method of manufacturing a semiconductor device which can reduce the number of impurity implantations. A buffer film (5b) for reducing a quantity of an impurity implantation is provided adjacent to an MIS gate structure (3) over a surface of a semiconductor substrate (1), and an impurity implantation (IP1) is carried out over the semiconductor substrate (1), through the buffer film (5b) in a portion in which the buffer film (5b) is provided. An impurity concentration is reduced in a portion in which the impurity implantation is carried out through the buffer film (5b), while the impurity concentration is increased in a portion in which the buffer film (5b) is not provided. Accordingly, a plurality of regions having different impurity concentrations can be formed as a source/drain of an MISFET by a one-time impurity implantation. Consequently, the number of the impurity implantations can be reduced.

Dependencies are inferred from the claim text.