Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKouji Matsuo, Kazuaki Nakajima
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Abstract
A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y<1.
Claims10
A semiconductor device, comprising:
- an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1;
- and
- a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y<1.
A method of manufacturing a semiconductor device, comprising:
- forming an MSiy film, where M represents a metal element selected from tungsten and molybdenum and y is not less than 0 and less than 1, i.e., 0≦y<1, on a first gate insulating film within a first region in which an n-type MIS transistor is to be formed and on a second gate insulating film within a second region in which a p-type MIS transistor is to be formed;
- and
- forming an MSix film, where x is greater than 1, i.e., x>1, within the first region by allowing the MSiy film within the first region to react with silicon.
A method of manufacturing a semiconductor device, comprising:
- forming an MSix film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1, on a first gate insulating film within a first region in which an n-type MIS transistor is to be formed and on a second gate insulating film within a second region in which a p-type MIS transistor is to be formed;
- and
- forming an MSiy film, where y is not less than 0 and less than 1, i.e., 0≦y<1, within the second region by extracting silicon contained in the MSix film within the second region.
Dependencies are inferred from the claim text.