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AssigneeCanon Kabushiki Kaisha
InventorsTakaharu Kondo, Masafumi Sano, Akira Sakai, Tadashi Sawayama, Ryo Hayashi, Shuichiro Sugiyama, Hiroyuki Ozaki, Yoshinori Sugiura
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A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.
A silicon-based film formation process comprising feeding a source gas into a vacuum reactor, and applying a high-frequency power to a high-frequency power feed section installed in the vacuum reactor, to cause plasma to take place to form a silicon-based film by chemical vapor deposition on a substrate placed on an electrode provided at a position opposing the high-frequency power feed section and grounded electrically,
A silicon-based film formation system comprising:
Dependencies are inferred from the claim text.