Plasma processing method and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising installing an object in a reactor which can be evacuated,

• introducing a gas into the reactor,
• decomposing the introduced gas with a plurality of high frequency powers applied to an electrode to produce plasma, and
• processing the object with the plasma,
• wherein the plurality of the high frequency powers are different in frequency from each other;
• and the frequency of at least one of the high frequency powers is changed during the processing step.

A process for producing a semiconductor device having a plurality of layers and a substrate, comprising installing the substrate in a reactor which can be evacuated,

• introducing a gas into the reactor,
• decomposing the introduced gas with a plurality of high frequency powers applied to an electrode to generate a glow discharge, and
• depositing at least one layer at the substrate,
• wherein the plurality of the high frequency powers are different in frequency from each other;
• and the frequency of at least one of the high frequency powers is changed during the depositing step.

A process for producing a semiconductor device having a plurality of layers and a substrate, comprising installing the substrate in a reactor which can be evacuated,

• introducing a gas into the reactor,
• decomposing the introduced gas with a plurality of high frequency powers having frequencies f1 and f2 applied to an electrode to generate a glow discharge,
• depositing a first layer at the substrate,
• introducing another gas into the reactor,
• decomposing the introducing gas with a plurality of high frequency powers having frequencies f3 and f4 applied to the electrode to generate a glow discharge, and
• depositing a second layer at the substrate,
• wherein at least one of the high frequency powers is different in frequency between when depositing the first layer and when depositing the second layer.