Method for processing semiconductor wafers in an enclosure with a treated interior surface
AssigneeMotorola, Inc.
InventorsRichard E. Martin, Dean J. Denning
Life of this patent
Estimating the term…
Abstract
A process for manufacturing semiconductors uses an enclosure (22) having an interior surface that is intentionally roughened by spraying quartz (44) onto the interior surface. The sprayed quartz (44) creates additional surface area for the purpose of trapping or capturing etched material in the enclosure during the process. The roughness of the interior surface is not significantly reduced during the semiconductor processing so that only chemical cleaning is required to maintain the interior surface for long-term use.
Claims35
A method for processing a semiconductor wafer, comprising:
- providing an enclosure having an interior surface of quartz;
- spraying quartz on the interior surface;
- inserting the semiconductor wafer in the enclosure;
- and
- processing the semiconductor wafer in the enclosure.
A method for processing a semiconductor wafer, comprising:
- providing an enclosure of quartz-like material having an interior surface,
- a layer of coating material on the interior surface that adheres to the quartz-like material, and a surface roughness of at least about 500 nanometers RMS;
- inserting the semiconductor wafer in the enclosure;
- and
- processing the semiconductor wafer in the enclosure.
A method, comprising:
- providing a glass enclosure having an interior surface;
- spraying a glass layer onto the interior surface to achieve a surface roughness of at least about 500 nanometers RMS;
- inserting and processing, one at a time, a first plurality of wafers and depositing a first layer of material on the glass layer during processing of the first plurality of wafers;
- removing the first layer of material from the glass layer without removing the glass layer;
- inserting and processing, one at a time, a second plurality of wafers and depositing a second layer of material on the glass layer during processing of the second plurality of wafers;
- and
- removing the second layer of material from the glass layer without removing the glass layer.
A method, comprising:
- providing an enclosure having an interior surface;
- providing a quartz wafer holding boat;
- spraying quartz on the quartz wafer holding boat;
- placing a wafer in the quartz wafer holding boat;
- inserting the quartz wafer holding boat into the enclosure;
- and
- processing the wafer in the enclosure.
A method for processing a semiconductor wafer, comprising:
- providing an enclosure having an interior surface;
- providing an assist means having an exterior surface for assisting in the processing of the semiconductor wafer, wherein the exterior surface is coated with a quartz layer having a surface roughness of at least about 500 nanometers;
- inserting the semiconductor wafer and the assist means in the enclosure;
- and
- processing the semiconductor wafer in the enclosure.
A semiconductor processing apparatus, comprising:
- a quartz enclosure having an interior surface;
- and
- a sprayed-on layer of quartz on the interior surface.
Dependencies are inferred from the claim text.