Methods of forming field effect transistors including floating gate field effect transistors

A method of forming a floating gate field effect transistor comprising:

• forming floating gate semiconductive material over a semiconductive material channel region;
• forming dielectric material over the floating gate semiconductive material;
• forming control gate semiconductive material over the dielectric material;
• in a common masking step, patterning the floating gate semiconductive material and the control gate semiconductive material into a desired gate line shape comprising floating gate semiconductive material sidewalls and control gate semiconductive material sidewalls;
• after the patterning, oxidizing the floating gate semiconductive material sidewalls and the control gate semiconductive material sidewalls in a common oxidizing step;
• and
• after the oxidizing, forming at least one of a conductive metal or metal compound in electrical connection with the patterned control gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of a control line of the floating gate field effect transistor being formed.

A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:

• forming transistor gate semiconductive material over a semiconductive material channel region;
• forming masking material over the transistor gate semiconductive material;
• patterning the transistor gate semiconductive material and the masking material into a gate line comprising semiconductive material sidewalls;
• after the patterning, oxidizing the semiconductive material sidewalls of the gate line;
• after the oxidizing, depositing insulative material over the gate line including the patterned masking material;
• after the depositing, exposing the masking material of the gate line through the insulative material;
• after the exposing, removing the masking material effective to form a trough line within the insulative material over the transistor gate semiconductive material;
• and
• after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material within the trough line to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.

A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:

• forming transistor gate semiconductive material into a gate line over a semiconductive material channel region, the gate line comprising semiconductive material sidewalls;
• oxidizing the semiconductive material sidewalls of the gate line;
• after the oxidizing, depositing insulative material over the gate line;
• after the depositing, removing the insulative material effective to expose the gate line;
• after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.