Method for fabricating semiconductor device

A method for fabricating a semiconductor device comprising:

• a first step of forming, on a substrate, a capacitor device including a capacitor dielectric film of a metal oxide;
• a second step of forming a first interlayer insulating film on said capacitor device;
• a third step of forming, on said first interlayer insulating film, a first conducting film electrically connected to said capacitor device;
• a fourth step of forming a second interlayer insulating film of an oxide on said first interlayer insulating film including said first conducting film;
• and
• a fifth step of forming a second conducting film on a substantially whole top face of said second interlayer insulating film,
• wherein, during a convey time when said substrate on which said second interlayer insulating film has been formed is being conveyed from the fourth step to the fifth step or during a wait time before or after conveying said substrate from the fourth step to the fifth step, said substrate on which said second interlayer insulating film has been formed is contained in a container an atmosphere within which has a lower moisture concentration than the ambient atmosphere.

A method for fabricating a semiconductor device comprising:

• a first step of forming, on a substrate, a capacitor device including a capacitor dielectric film of a metal oxide;
• a second step of forming an interlayer insulating film of an oxide on said capacitor device;
• a third step of forming an interconnect of a conducting film on said interlayer insulating film;
• and
• a fourth step of forming a protection film of a nitride on a substantially whole top face of said interlayer insulating film including said interconnect,
• wherein, during a convey time when said substrate on which said interlayer insulating film and said interconnect have been formed is being conveyed from the third step to the fourth step or during a wait time before or after conveying said substrate from the third step to the fourth step, said substrate on which said interlayer insulating film and said interconnect have been formed is contained in a container an atmosphere within which has a lower moisture concentration than the ambient atmosphere.