Production method for semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsOsamu Nakamura, Manabu Katsumura, Shunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.
Claims9
A method of manufacturing a semiconductor device, comprising:
- the process of forming a semiconductor thin film having the amorphous structure containing silicon as the main component;
- the step of adding metal to said semiconductor thin film having the amorphous structure;
- the process of reforming said semiconductor thin film having the amorphous structure into a crystalline semiconductor thin film containing silicon as the main component by a first heat treatment;
- the process of forming an island-like insulating film;
- the process of adding a nonmetal element or ion of the nonmetal element to said crystalline semiconductor thin film with said island-like insulating film as a mask to form a region in which the nonmetal element or the ions of the nonmetal element has (have) been added to said crystalline semiconductor thin film;
- and
- the process of subjecting said crystalline semiconductor thin film to a second heat treatment to getter said metal to the region to which said nonmetal element or the ions of said nonmetal element has (have) been added,
- wherein the shape of said island-like insulating film for the surface parallel with the surface of said crystalline semiconductor thin film is a polygon having n (n>20) vertexes, and also is a polygon having m (m>8) vertexes, in each of which the interior angle is equal to or higher than 180° C.
A method of manufacturing a semiconductor device, comprising:
- the process of forming a semiconductor thin film having the amorphous structure containing silicon as the main component;
- the step of adding metal to said semiconductor thin film having the amorphous structure;
- the process of reforming said semiconductor thin film having the amorphous structure into the crystalline semiconductor thin film containing silicon as the main component by a first heat treatment;
- the process of forming an island-like insulating film;
- the process of adding a nonmetal element or ions of the nonmetal element to said crystalline semiconductor thin film with said island-like insulating film as a mask to form a region in which the nonmetal element or the ions of the nonmetal element has (have) been added to said crystalline semiconductor thin film;
- and
- the process of subjecting said crystalline semiconductor thin film to a second heat treatment to getter said metal for the region to which said nonmetal element or the ions of said nonmetal element has (have) been added.
Dependencies are inferred from the claim text.