Back to results
US 2003/0143784 A1Published application
Thin film manufacturing method and manufacturing apparatus, and thin-film transistor and manufacturing method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMikihiko Nishitani, Masashi Goto
Life of this patent
Estimating the term…
Abstract
A method of fabricating a thin film includes: forming, on a substrate, a thin film with film properties varying from region to region on the substrate, by selectively heating the substrate; and patterning the thin film in a predetermined pattern by etching the thin film to selectively remove only a portion of the thin film with specified film properties. The method reduces the fabrication process temperature and the number of fabrication steps, while inhibiting degradation in device performance.
Claims66
A method of fabricating a thin film comprising:
- forming a thin film on a substrate, the thin film with film properties varying from region to region on the substrate being formed by selectively heating the substrate;
- and
- patterning the thin film in a predetermined pattern by etching the thin film to selectively remove only a portion of the thin film with specified film properties.
A method of fabricating a thin film comprising:
- depositing a thin film on a substrate, the thin film being deposited only in a specified region by selectively heating the substrate to vary a deposition rate from region to region on the substrate.
A method of fabricating a thin film transistor comprising:
- forming, on an insulating substrate, a metal thin film with a predetermined pattern;
- forming an insulating layer on the metal thin film;
- forming a semiconductor thin film on the insulating layer, the semiconductor thin film with film properties varying between a region above and in the vicinity of the metal thin film and other regions being formed by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the insulating layer is selectively heated;
- and
- patterning the semiconductor thin film in a predetermined pattern by etching the semiconductor thin film to selectively remove the other regions.
2 more elements
A method of fabricating a thin film transistor comprising:
- forming, on an insulating substrate, a metal thin film with a predetermined pattern;
- forming an insulating layer on the metal thin film;
- and
- depositing a semiconductor thin film on the insulating layer, the semiconductor thin film being deposited only in a specified region by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the insulating layer is selectively heated, thereby varying a deposition rate from region to region on the insulating layer.
1 more element
A method of fabricating a thin film transistor comprising:
- forming, on an insulating substrate, a metal thin film with a predetermined pattern;
- forming a first semiconductor thin film on the insulating substrate with the insulating substrate being selectively heated by imparting energy to the metal thin film to release the energy as heat from the metal thin film, the first semiconductor thin film having film properties varying between a portion covering the metal thin film and other portions;
- patterning the first semiconductor thin film by etching the first semiconductor thin film to selectively remove only the other portions, thereby covering only the metal thin film;
- forming, on the insulating substrate having the first semiconductor thin film thereon, a second semiconductor thin film with a higher melting point than the first semiconductor thin film;
- and
- crystallizing the second semiconductor thin film by heat treatment with the first semiconductor thin film as growth nucleus.
3 more elements
A method of fabricating a thin film transistor comprising:
- forming, on an insulating substrate, a metal thin film with a predetermined pattern;
- depositing a first semiconductor thin film so as to cover the metal thin film, the fist semiconductor thin film being deposited only on top and side surfaces of the metal thin film, by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that a deposition rate varies between a region in the vicinity of the metal thin film and other regions;
- forming, on the insulating substrate having the first semiconductor thin film thereon, a second semiconductor thin film with a higher melting point than the first semiconductor thin film;
- and
- crystallizing the second semiconductor thin film by heat treatment with the first semiconductor thin film as growth nucleus.
2 more elements
A method of fabricating a thin film transistor comprising:
- forming, on an insulating substrate, a metal thin film with a predetermined pattern;
- forming an insulating layer on the insulating substrate having the metal thin film thereon;
- forming a first semiconductor thin film on the insulating layer, the first semiconductor thin film with film properties varying from region to region on the insulating layer being formed by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the insulating layer is selectively heated;
- patterning the first semiconductor thin film in a predetermined pattern by etching the first semiconductor thin film to selectively remove only a portion of the first semiconductor thin film with specified film properties;
- forming, on the insulating substrate having the first semiconductor thin film thereon, a second semiconductor thin film with a higher melting point than the first semiconductor thin film;
- and
- crystallizing the second semiconductor thin film by heat treatment with the first semiconductor thin film as growth nucleus.
4 more elements
A method of fabricating a thin film transistor comprising:
- forming, on an insulating substrate, a metal thin film with a predetermined pattern;
- forming an insulating layer on the insulating substrate having the metal thin film thereon;
- depositing a first semiconductor thin film on the insulating layer, the first semiconductor thin film being deposited only in a specified region by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the insulating layer is selectively heated, thereby varying a deposition rate from region to region on the insulating layer;
- forming, on the insulating substrate having the first semiconductor thin film thereon, a second semiconductor thin film with a higher melting point than the first semiconductor thin film;
- and
- crystallizing the second semiconductor thin film by heat treatment with the first semiconductor thin film as growth nucleus.
3 more elements
An apparatus for fabricating a thin film comprising:
- a metal thin film formation means for forming, on a substrate, a metal thin film with a predetermined pattern;
- a thin film formation means for forming a thin film on the substrate, the thin film with film properties varying from region to region on the substrate being formed by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the substrate is selectively heated;
- and
- an etching means for patterning the thin film in a predetermined pattern by etching the thin film to selectively remove only a portion of the thin film with specified film properties.
1 more element
An apparatus for fabricating a thin film comprising:
- a metal thin film formation means for forming, on a substrate, a metal thin film with a predetermined pattern;
- and
- a thin film formation means for forming a thin film on the substrate, the thin film being formed only in a specified region by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the substrate is selectively heated, thereby varying a deposition rate from region to region on the substrate.
A thin film transistor comprising;
- a metal thin film having a predetermined pattern and provided on an insulating substrate;
- an insulating layer provided on the insulating substrate having the metal thin film thereon;
- and a semiconductor thin film having a predetermined pattern and provided on the insulating layer,
- wherein the semiconductor thin film is patterned in the predetermined pattern by forming the semiconductor thin film by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the insulating layer is selectively heated, thereby varying film properties between a region above and in the vicinity of the metal thin film and other regions, and subsequently etching the semiconductor thin film to selectively remove the other regions.
1 more element
A thin film transistor comprising:
- a metal thin film having a predetermined pattern and provided on an insulating substrate;
- an insulating layer provided on the insulating substrate having the metal thin film thereon;
- and a semiconductor thin film having a predetermined pattern and provided on the insulating layer,
- wherein the semiconductor thin film is deposited only in a specified region by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that the insulating layer is selectively heated, thereby varying a deposition rate from region to region on the insulating layer.
1 more element
A thin film transistor comprising:
- a metal thin film patterned on an insulating substrate in a predetermined pattern;
- a first semiconductor thin film deposited so as to cover the metal thin film, the first semiconductor thin film being provided so as to cover only the metal thin film, by imparting energy to the metal thin film to release the energy as heat from the metal thin film, thereby providing the first semiconductor thin film with film properties varying between a portion covering the metal thin film and other regions, and subsequently selectively removing the other portions by etching;
- and
- a second semiconductor thin film provided on the insulating substrate having the first semiconductor thin film thereon, and having a higher melting point than the first semiconductor thin film, the second semiconductor thin film being crystallized by heat treatment with the first semiconductor thin film as growth nucleus,
- wherein a region of the crystallized second semiconductor thin film not having the first semiconductor thin film serves as a channel portion.
2 more elements
A thin film transistor comprising:
- a metal thin film patterned on an insulating substrate in a predetermined pattern;
- a first semiconductor thin film deposited so as to cover the metal thin film, the first semiconductor thin film being deposited on top and side surfaces of the metal thin film, by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that a deposition rate varies between a region in the vicinity of the metal thin film and other regions;
- and
- a second semiconductor thin film provided on the insulating substrate having the first semiconductor thin film thereon, and having a higher melting point than the first semiconductor thin film, the second semiconductor thin film being crystallized by heat treatment with the first semiconductor thin film as growth nucleus,
- wherein a region of the crystallized second semiconductor thin film not having the first semiconductor thin film serves as a channel portion.
2 more elements
A thin film transistor comprising:
- a metal thin film patterned on an insulating substrate in a predetermined pattern;
- an insulating layer provided on the insulating substrate having the metal thin film thereon;
- a first semiconductor thin film formed on the insulating layer with the insulating layer being selectively heated by imparting energy to the metal thin film to release the energy as heat from the metal thin film, thereby varying film properties of the first semiconductor thin film between a portion corresponding to a region with a high surface temperature of the insulating layer and a portion corresponding to a region with a low surface temperature of the insulating layer, the first semiconductor thin film being provided only in the region with a high surface temperature, by etching the first semiconductor thin film to selectively remove the portion corresponding to the region with a low surface temperature;
- and
- a second semiconductor thin film provided on the insulating substrate having the first semiconductor thin film thereon, and having a higher melting point than the first semiconductor thin film, the second semiconductor thin film being crystallized by heat treatment with the first semiconductor thin film as growth nucleus,
- wherein a region of the crystallized second semiconductor thin film not having the first semiconductor thin film serves as a channel portion.
3 more elements
A thin film transistor comprising:
- a metal thin film patterned on an insulating substrate in a predetermined pattern;
- an insulating layer provided on the insulating substrate having the metal thin film thereon;
- a first semiconductor thin film provided on the insulating layer, the insulating layer selectively heated by imparting energy to the metal thin film to release the energy as heat from the metal thin film so that a deposition rate varies between a region with a high surface temperature of the insulating layer and a region with a low surface temperature of the insulating layer, thereby providing the first semiconductor thin film only in the region with a high surface temperature;
- and
- a second semiconductor thin film provided on the insulating substrate having the first semiconductor thin film thereon, and having a higher melting point than the first semiconductor thin film, the second semiconductor thin film being crystallized by heat treatment with the first semiconductor thin film as growth nucleus,
- wherein a region of the crystallized second semiconductor thin film not having the first semiconductor thin film serves as a channel portion.
3 more elements
Dependencies are inferred from the claim text.