Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures

A method of forming a non-volatile resistance variable device, comprising:

• forming a patterned mass comprising at lest 90 molar percent elemental silver over a substrate and to a first maximum thickness;
• forming a layer comprising at least 90 molar percent elemental selenium over the substrate and including the patterned mass comprising elemental silver;
• exposing the substrate to conditions effective to react only some of the elemental selenium with the elemental silver to form the patterned mass to comprise silver selenide, the exposing forming the silver selenide to be rich in silver, and forming the patterned mass to have a maximum second thickness which is greater than the maximum first thickness, the exposing forming the patterned mass to comprise at least 80 molar percent silver selenide, the exposing driving at least a majority of that portion of the elemental selenium received over the patterned mass into the patterned mass;
• removing all unreacted elemental selenium from the substrate;
• providing a first conductive electrode in electrical connection with one portion of the patterned mass comprising silver selenide;
• providing a germanium selenide comprising material in electrical connection with another portion of the patterned mass comprising silver selenide;
• and
• providing a second conductive electrode in electrical connection with the germanium selenide comprising material.

A method of forming a non-volatile resistance variable device, comprising:

• forming a first conductive electrode material over a substrate;
• forming an insulative material over the first conductive electrode material and an opening therethrough to the first conductive electrode material, the opening comprising a desired shape of at least a portion of a final resistance setable structure of the device;
• filling the opening with an elemental silver comprising material in electrical connection with the first conductive electrode material;
• forming a layer comprising elemental selenium over the insulative material and over the elemental silver comprising material within the opening;
• exposing the substrate to conditions effective to react elemental selenium received over the elemental silver to form at least a portion of the filled opening to comprise silver selenide;
• removing unreacted elemental selenium received over the insulative material from the substrate;
• and
• providing a germanium selenide comprising material in electrical connection with the silver selenide;
• and
• providing a second conductive electrode in electrical connection with the germanium selenide comprising material.

A method of forming a silver selenide comprising structure, comprising:

• forming a substrate comprising a first outer portion and a second outer portion, the first outer portion comprising a patterned mass comprising elemental silver, the second outer portion not comprising elemental silver;
• forming a layer comprising elemental selenium over the first and second outer portions;
• and
• exposing the substrate to oxidizing conditions effective to both, a) react elemental selenium received over the first portion with elemental silver to form the patterned mass to comprise silver selenide, and b) remove elemental selenium of the layer over the second outer portion from the substrate.