Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

A method of fabricating a nitride semiconductor comprising the steps of:

• forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1;
• forming, in an upper portion of said first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction;
• forming a mask for covering bottoms and at least part of walls of recesses formed between said convexes adjacent to each other;
• and
• forming, on said first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, portions of said convexes exposed from said mask film.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms of said grooves;
• growing, by using, as a seed crystal, C planes corresponding to portions of a top face of said first nitride semiconductor layer exposed from said mask film between said grooves, a lamination body including a second nitride semiconductor layer, an active layer formed from a third nitride semiconductor layer having a smaller energy gap than said second nitride semiconductor layer and a fourth nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• and
• forming, on said lamination body, a current confinement part for selectively injecting carriers into said active layer.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms and at least part of walls of said grooves;
• growing, by using, as a seed crystal, portions of said first nitride semiconductor layer exposed from said mask film between said grooves, a lamination body including a second nitride semiconductor layer, an active layer formed from a third nitride semiconductor layer having a smaller energy gap than said second nitride semiconductor layer and a fourth nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• and
• forming, on said lamination body, a current confinement part for selectively injecting carriers into said active layer.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming, in an upper portion of a substrate, plural grooves extending at intervals along a substrate surface direction;
• selectively growing, on a top face of said substrate between said grooves, a lamination body including a first nitride semiconductor layer, an active layer formed from a second nitride semiconductor layer having a smaller energy gap than said first nitride semiconductor layer and a third nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• and
• forming, on said lamination body, a current confinement part for selectively injecting carriers into said active layer.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms of said grooves;
• growing, by using, as a seed crystal, C planes corresponding to portions of a top face of said first nitride semiconductor layer exposed from said mask film between said grooves, a lamination body including a second nitride semiconductor layer, a third nitride semiconductor layer, an active layer formed from a fourth nitride semiconductor layer having a larger refractive index than said third nitride semiconductor layer and a fifth nitride semiconductor layer having a smaller refractive index than said active layer stacked in this order from a substrate side;
• and
• forming, on said lamination body, a current confinement part for selectively injecting carriers into said active layer,
• wherein the step of growing said lamination body includes a sub-step of growing said second nitride semiconductor layer with a refractive index thereof smaller than or equivalent to a refractive index of said third nitride semiconductor layer.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms and at least part of walls of said grooves;
• growing, by using, as a seed crystal, portions of said first nitride semiconductor layer exposed from said mask film between said grooves, a lamination body including a second nitride semiconductor layer, a third nitride semiconductor layer, an active layer formed from a fourth nitride semiconductor layer having a larger refractive index than said third nitride semiconductor layer and a fifth nitride semiconductor layer having a smaller refractive index than said active layer stacked in this order from a substrate side;
• and
• forming, on said lamination body, a current confinement part for selectively injecting carriers into said active layer,
• wherein the step of growing said lamination body includes a sub-step of growing said second nitride semiconductor layer with a refractive index thereof smaller than or equivalent to a refractive index of said third nitride semiconductor layer.

A method of fabricating a nitride semiconductor comprising the steps of:

• forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1;
• forming, in an upper portion of said first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms of recesses formed between said convexes adjacent to each other;
• and
• growing, on said first nitride semiconductor layer, plural second nitride semiconductor layers of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of said convexes exposed from said mask film,
• wherein the step of forming said plural second nitride semiconductor layers includes a sub-step of forming each of said second nitride semiconductor layers in a manner that I facet of said second nitride semiconductor layer parallel to a direction of extending said convexes is exposed every time said second nitride semiconductor layer extends over a given number of convexes among said plural convexes.

A method of fabricating a nitride semiconductor comprising the steps of:

• forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1;
• forming, in an upper portion of said first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms and at least part of walls of recesses formed between said convexes adjacent to each other;
• and
• growing, on said first nitride semiconductor layer, plural second nitride semiconductor layers of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, portions of said convexes exposed from said mask film,
• wherein the step of forming said plural second nitride semiconductor layers includes a sub-step of forming each of said second nitride semiconductor layers in a manner that a facet of said second nitride semiconductor layer parallel to a direction of extending said convexes is exposed every time said second nitride semiconductor layer extends over a given number of convexes among said plural convexes.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms of said grooves;
• growing, by using, as a seed crystal, C planes corresponding to portions of a top face of said first nitride semiconductor layer exposed from said mask film between said grooves, plural lamination bodies each including a second nitride semiconductor layer, an active layer formed from a third nitride semiconductor layer having a smaller energy gap than said second nitride semiconductor layer and a fourth nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• and
• forming, on each of said lamination bodies, a current confinement part for selectively injecting carriers into said active layer,
• wherein the step of growing said plural lamination bodies includes a sub-step of forming each of said lamination bodies in a manner than a cavity facet including said current confinement part is exposed every time said lamination body extends over a given number of C planes of said first nitride semiconductor layer.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals along a substrate surface direction;
• forming a mask film for covering bottoms and at least part of walls of said grooves;
• growing, by using, as a seed crystal, portions of said first nitride semiconductor layer exposed from said mask film between said grooves, plural lamination bodies each including a second nitride semiconductor layer, an active layer formed from a third nitride semiconductor layer having a smaller energy gap than said second nitride semiconductor layer and a fourth nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• and
• forming, on each of said lamination bodies, a current confinement part for selectively injecting carriers into said active layer,
• wherein the step of growing said plural lamination bodies includes a sub-step of forming each of said lamination bodies in a manner than a cavity facet including said current confinement part is exposed every time said lamination body extends over a given number of portions of said first nitride semiconductor layer sandwiched between said grooves adjacent to each other.

A method of fabricating a nitride semiconductor device comprising the. steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural first grooves extending at intervals along one substrate surface direction;
• forming a first mask film for covering bottoms of said first grooves;
• growing a second nitride semiconductor layer by using, as a seed crystal, C planes corresponding to portions of a top face of said first nitride semiconductor layer exposed from said first mask film between said first grooves;
• forming, in an upper portion of said second nitride semiconductor layer, plural second grooves extending at intervals in said one substrate surface direction and having portions between said second grooves adjacent to each other in different positions, in a substrate surface direction, from the portions between said first grooves adjacent to each other;
• forming a second mask film for covering bottoms of said second grooves;
• growing a third nitride semiconductor layer including an active layer by using, as a seed crystal, C planes corresponding to portions of a top face of said second nitride semiconductor layer exposed from said second mask film between said second grooves;
• and
• forming, on said third nitride semiconductor layer, a current confinement part with a resonating direction of generated light substantially perpendicular to said one substrate surface direction.

A method of fabricating a nitride semiconductor device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural first grooves extending at intervals along one substrate surface direction;
• forming a first mask film for covering bottoms and at least part of walls of said first grooves;
• growing a second nitride semiconductor layer by using, as a seed crystal, portions of said first nitride semiconductor layer exposed from said first mask film between said first grooves;
• forming, in an upper portion of said second nitride semiconductor layer, plural second grooves extending at intervals along said one substrate surface direction and having portions between said second grooves adjacent to each other in positions different, in a substrate surface direction, from portions between said first grooves adjacent to each other;
• forming a second mask film for covering bottoms and at least part of walls of said second grooves;
• growing a third nitride semiconductor layer including an active layer by using, as a seed crystal, portions of said second nitride semiconductor layer exposed from said second mask film between said second grooves;
• and
• forming, on said third nitride semiconductor layer, a current confinement part with a resonating direction of generated light substantially perpendicular to said one substrate surface direction.

A method of fabricating a semiconductor light emitting device comprising the steps of:

• forming a first semiconductor layer on a substrate and forming, in an upper portion of said first semiconductor layer, plural first convexes extending at intervals along a substrate surface direction;
• forming, on said first semiconductor layer, a second semiconductor layer having a lower face in contact with said first convexes from a lamination body including an active layer, and
• forming, in an upper portion of said second semiconductor layer, plural second convexes extending in a direction the same as said first convexes at intervals different from the intervals of said first convexes;
• forming, on said substrate, a mark for aligning a mask for identifying a convex for injecting carriers into said active layer among said plural second convexes;
• and
• aligning said mask by using said mark and forming one of said plural second convexes into a carrier injection part by using said mask.

A method of fabricating a semiconductor light emitting device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals in a substrate surface direction;
• forming a mask film for covering bottoms of said grooves;
• growing, by using, as a seed crystal, C planes corresponding to portions of a top face of said first nitride semiconductor layer exposed from said mask film between said grooves, a lamination body including a second nitride semiconductor layer, an active layer formed from a third nitride semiconductor layer having a smaller energy gap than said second nitride semiconductor layer and a fourth nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• forming, in an upper portion of said lamination body, plural convexes extending in a direction the same as said grooves at intervals different from the intervals of said grooves;
• and
• selecting one convex in a position above any of said grooves and in the vicinity of an area between said grooves among said plural convexes and forming said selected convex into a carrier injection part for injecting carriers into said active layer.

A method of fabricating a semiconductor light emitting device comprising the steps of:

• forming a first nitride semiconductor layer on a substrate;
• forming, in an upper portion of said first nitride semiconductor layer, plural grooves extending at intervals in a substrate surface direction;
• forming a mask film for covering bottoms and at least part of walls of said grooves;
• growing, by using, as a seed crystal, portions of said first nitride semiconductor layer exposed from said mask film between said groove, a lamination body including a second nitride semiconductor layer, an active layer formed from a third nitride semiconductor layer having a smaller energy gap than said second nitride semiconductor layer and a fourth nitride semiconductor layer having a larger energy gap than said active layer stacked in this order from a substrate side;
• forming, in an upper portion of said lamination body, plural convexes extending in a direction the same as said grooves at intervals different from the intervals of said grooves;
• and
• selecting one convex in a position above any of said grooves and in the vicinity of an area between said grooves among said plural convexes and forming said selected convex into a carrier injection part for injecting carriers into said active layer.