Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
AssigneeSony Corporation
InventorMotonobu Takeya
Life of this patent
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Abstract
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
Claims40
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
A method of heat-treating a nitride compound semiconductor layer, comprising heat-treating a nitride compound semiconductor layer doped with a p-type impurity in a state where the heating time period t (unit:
- minute) and the heating temperature T (unit:
- K) satisfy conditions of t≧100 and the following equation (1),
- T≧α/[ln({square root}{square root over (t)})+ln(D0)−ln(C)] (1)
- wherein α is a coefficient that is 1.04×104, ln(D0) is a coefficient that is 53 and C is a carrier concentration (unit:
- cm−3) of the nitride compound semiconductor layer after the heat treatment thereof.
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity, at a temperature that is at least 200° C. but not higher than 1200° C., in one atmosphere selected from;
- (A) aerial atmosphere,
- (B) an atmosphere supplied with an oxygen gas and a hydrogen gas,
- (C) an atmosphere supplied with an oxygen gas and steam,
- (D) an atmosphere supplied with an oxygen gas, a hydrogen gas and steam,
- (E) an inert gas atmosphere containing steam, or
- (F) a reduced-pressure atmosphere containing steam and having a pressure lower than atmospheric pressure.
A method of producing a semiconductor device, including the step of heating a nitride compound semiconductor layer, said step comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
A method of producing a semiconductor device, including the step of heat-treating a nitride compound semiconductor layer doped with a p-type impurity in a state where the heating time period t (unit:
- minute) and the heating temperature T (unit:
- K) satisfy conditions of t≧100 and the following equation (1),
- T≧α/[ln({square root}{square root over (t)})+ln(D0)−ln(C)] (1)
- wherein α is a coefficient that is 1.04×104, ln(D0) is a coefficient that is 53 and C is a carrier concentration (unit:
- cm−3) of the nitride compound semiconductor layer after the heat treatment thereof.
A method of producing a semiconductor device, including the step of heating a nitride compound semiconductor layer doped with a p-type impurity, at a temperature that is at least 200° C. but not higher than 1200° C., in one atmosphere selected from;
- (A) aerial atmosphere,
- (B) an atmosphere supplied with an oxygen gas and a hydrogen gas,
- (C) an atmosphere supplied with an oxygen gas and steam,
- (D) an atmosphere supplied with an oxygen gas, a hydrogen gas and steam,
- (E) an inert gas atmosphere containing steam, or
- (F) a reduced-pressure atmosphere containing steam and having a pressure lower than atmospheric pressure.
Dependencies are inferred from the claim text.