Method for fabricating monolithic integrated semiconductor photonic device
AssigneeElectronics and Telecommunications Research Institute
InventorsYongsoon Baek, Jungwoo Park, Sungbock Kim, Kwangryong Oh
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Abstract
A method of fabricating a monolithic integrated semiconductor photonic device is provided. In this method, it is possible to remarkably reduce an optical loss in a passive waveguide by forming a non-doped clad layer around a passive layer. Thus, the passive waveguide can be effectively coupled with an active waveguide. Further, a current confinement layer is formed around an active layer, using the non-doped clad layer. Therefore, an expensive tool such as an ion implanter is not required, thereby decreasing manufacturing costs.
Claims25
A method of fabricating a monolithic integrated semiconductor photonic device which effectively combines an active waveguide and a passive waveguide, and minimizes an optical loss, the method comprising:
- forming an active layer of a strip shape and a passive layer of a strip shape, which is connected directly to the active layer, on a first conductive substrate;
- forming a non-doped clad layer around the passive layer so as to form a passive waveguide, and a buried ridge strip (BRS) type current confinement layer around the active layer without ion injection;
- and
- forming a second conductive current injection layer on the resultant structure having the current confinement layer so as to form an active waveguide coupled to the passive waveguide.
A method of fabricating a monolithic integrated semiconductor photonic device that is integrated with a mode-conversion waveguide, and effectively combines an active waveguide and a passive waveguide, and is capable of minimizes an optical loss in light propagating into these waveguides, the method comprising:
- sequentially growing a first conductive buffer layer, a mode-conversion passive layer, a first conductive space layer, a first layer for an active layer, and a first protection layer of a second conductive type on a first conductive substrate;
- etching the first protection layer and the first layer for an active layer so as to expose a portion of the top of the space layer;
- selectively growing a second layer for a passive layer in contact with the sidewall of the first layer for an active layer on the exposed portion of the space layer, and then growing a second non-doped protection layer on the second layer for a passive layer;
- etching the first protection layer, the second protection layer, the first layer for an active layer, and the second layer for a passive layer, so that a portion of the top of the space layer is exposed, and then, an active layer, a protection layer above the active layer, a passive layer that is coupled directly to the active layer, and a protection layer above the passive layer are formed in the shape of a strip;
- forming a first mask for covering the active layer, the protection layer above the active layer, the passive layer, and the protection layer above the passive layer, the first mask having wider width than the active layer and the passive layer;
- etching a portion of the exposed buffer layer with the first mask as an etch mask while etching the space layer and the mode-conversion passive layer, so as to expose a portion of the top of the buffer layer;
- forming a second mask by patterning the first mask so as to expose the passive layer coupled directly to the active layer and the protection layer above the passive layer;
- selectively forming a layer for a non-doped clad layer and for first current confinement layer on the portion of the resultant structure that is not covered with the second mask, so as to form a passive waveguide;
- sequentially growing a second current confinement layer of a second conductive type and a third current confinement layer of a first conductive type on the layer for the non-doped clad layer and for a first current confinement layer;
- and
- removing the second mask, and forming a current injection layer of a second conductive type on the resultant structure having the third current confinement layer, so as to form an active waveguide coupled with the passive waveguide.
Dependencies are inferred from the claim text.