Method of fabricating nitride semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkihiko Ishibashi, Isao Kidoguchi, Kenji Harafuji, Yuzaburo Ban
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Abstract
The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growing another nitride semiconductor layer adjacent to the one nitride semiconductor layer among the plural steps, a step of changing a growth ambient pressure from a first growth ambient pressure to a second growth ambient pressure different from the first growth ambient pressure.
Claims7
A method of fabricating a nitride semiconductor device comprising:
- a first step of growing a first nitride semiconductor layer including indium on a substrate and under a first growth ambient pressure higher than the atmospheric pressure;
- and
- a second step of reducing the first growth ambient pressure to a second growth ambient pressure lower than the atmospheric pressure, thereafter growing a second nitride semiconductor layer including magnesium on the first nitride semiconductor layer and under the second growth ambient pressure.
Dependencies are inferred from the claim text.