Method for reduction of contaminants in amorphous-silicon film
AssigneeApplied Materials, Inc.
InventorsTae Kyung Won, Quanyuan Shang
Life of this patent
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Abstract
A method of conditioning a chemical vapor deposition chamber prior to a deposition step on a substrate. The method includes passing a deposition gas mixture into the chamber under reaction conditions so as to deposit a layer of amorphous silicon on the interior surfaces in the chamber. Thereafter, a device comprising an amorphous silicon film is manufactured in a chemical vapor deposition chamber.
Claims27
A method of conditioning a chemical vapor deposition chamber comprising, prior to a deposition step on a substrate, passing a deposition gas mixture into the chamber under reaction conditions so as to deposit a layer of amorphous silicon on the interior surfaces in the chamber.
A device comprising an amorphous silicon film, wherein
- said device is manufactured in a chemical vapor deposition chamber and wherein,
- said chemical vapor deposition chamber is conditioned by passing a deposition gas mixture into the chamber under reaction conditions so as to deposit a layer of amorphous silicon on the interior surfaces in the chamber prior to manufacturing said device in said chamber.
Dependencies are inferred from the claim text.