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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYukio Shibano, Satoru Miharada, Shuhei Ueda, Atsushi Watabe, Masaki Tabata
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A large-sized substrate having a diagonal length of not less than 500 mm and a ratio of flatness/diagonal length of not more than 6.0×10−6 is disclosed. By use of the large-sized substrate for exposure of the present invention, the exposure accuracy, particularly the register accuracy and resolution are enhanced, so that it is possible to achieve high-precision exposure of a large-sized panel. With the processing method according to the present invention, it is possible to stably obtain a large-sized photomask substrate with a high flatness, and since the CD accuracy (dimensional accuracy) at the time of exposure of the panel is enhanced, it is possible to perform exposure of a fine pattern, leading to a higher yield of the panel. Furthermore, by applying the processing method according to the present invention, it is also possible to create an arbitrary surface shape.
A large-sized substrate having a diagonal length of not less than 500 mm and a ratio of flatness/diagonal length of not more than 6.0×10−6.
A method of producing a large-sized substrate, comprising the steps of preliminarily measuring the flatness of a large-sized substrate having a diagonal length of not less than 500 mm, and partially removing projected portions of said substrate by a processing tool based on the measurement data so as thereby to enhance the flatness of said large-sized substrate.
A method of producing a large-sized substrate, comprising the steps of preliminarily measuring the flatness and the parallelness of a large-sized substrate having a diagonal length of not less than 500 mm, and partially removing projected portions and thick portions of said substrate by a processing tool based on the measurement data so as thereby to enhance the flatness and the parallelness of said large-sized substrate.
Dependencies are inferred from the claim text.