Method for forming thin film with a gas cluster ion beam
AssigneesResearch Development Corporation of Japan, Sanyo Electric Co., Ltd.
InventorsMakoto Akizuki, Mitsuaki Harada, Atsumasa Doi, Isao Yamada
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Abstract
A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.
Claims11
A method for forming a thin film on the surface of a substrate with a gas cluster ion beam, which comprises the step of irradiating the surface of a substrate with ions of a gas cluster (which is a massive group of atoms or molecules of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) to cause a reaction with the surface of a substrate and thereby form a thin film on the substrate surface.
A method as claimed in 1, wherein impurities present on the substrate are removed by the irradiation with the gas cluster ion beam, thereby forming a thin film with a low content of impurities.
A method for generating gas cluster ions, which comprises the steps of generating a gas cluster with an expansion type nozzle cooled by a coolant and ionizing the resultant cluster.
Dependencies are inferred from the claim text.