Method of preventing cracking in optical quality silica layers
AssigneeDALSA Semiconductor Inc.
InventorsLuc Ouellet, Jonathan Lachance, Sylvie Archambault
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Abstract
A method is disclosed for making an integrated photonic device having buffer, core and cladding layers deposited on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.
Claims24
In a method of making an integrated photonic device having buffer, core and cladding layers deposited on a front side of a wafer having said front side and a back side, the improvement wherein a thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above about 600° C. on the cladding layer to prevent the cracking of said layers as a result of said thermal treatment.
A method of making a photonic device, comprising:
- providing a wafer having a front side and a back side;
- depositing a buffer layer on the front side of said wafer;
- subjecting the wafer to a first thermal treatment between 500 and 1200° C.;
- depositing a core layer over said buffer layer;
- subjecting the wafer to a second thermal treatment between 500 and 1200° C.;
- depositing a cladding layer;
- depositing extra layer on the back side of the wafer;
- and
- performing a high temperature thermal treatment above about 600° C. on the cladding layer to prevent the cracking of the deposited layers.
Dependencies are inferred from the claim text.