Vertical MIMCap manufacturing method
AssigneeInfineon Technologies North America Corp.
InventorXian J. Ning
Life of this patent
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Abstract
A method of manufacturing a vertical metal-insulator-metal capacitor (MIMCap) (10) in regions (19) of an insulating layer (14). Trenches for both conductive lines and vertical MIMCap's are formed in the insulating layer (14), and regions (19) are covered by resist (20) while the conductive lines (24) are deposited on the wafer. The resist (20) is removed, and the MIMCap dielectric and top plate conductive material (28) is deposited, forming a vertical MIMCap in regions (19).
Claims20
A method of fabricating a vertical metal-insulator-metal capacitor (MIMCap), comprising:
- providing a wafer having a workpiece;
- depositing an insulating layer over the workpiece;
- patterning the insulating layer with a plurality of trenches, the insulating layer comprising at least one first region and at least one second region, the first region comprising trenches for at least one MIMCap;
- depositing a first conductive layer over the insulating layer within the trenches;
- depositing a resist over the insulating layer first regions;
- depositing a second conductive material within the insulating layer second region trenches;
- removing the resist;
- depositing a thin dielectric layer over the insulating layer second region within the second region trenches;
- and
- depositing a third conductive material over the thin dielectric layer within the second region trenches.
A method of fabricating a vertical metal-insulator-metal capacitor (MIMCap), comprising:
- providing a wafer having a workpiece;
- depositing an inter-level dielectric over the workpiece;
- patterning the inter-level dielectric with a plurality of trenches, the inter-level dielectric comprising at least one first region and at least one second region, the first region comprising trenches for at least one MIMCap, the second region comprising trenches for a plurality of conductive lines;
- depositing a conductive liner over the inter-level dielectric within the trenches;
- depositing a seed layer over the conductive liner;
- depositing a resist over the conductive liner;
- removing the resist over the conductive liner in the inter-level dielectric second regions, leaving resist over the conductive liner in the inter-level dielectric first regions;
- depositing a first conductive material within the insulating layer second region trenches to form a plurality of conductive lines;
- removing the resist;
- depositing a MIMCap dielectric over the inter-level dielectric second region within the second region trenches;
- and
- depositing a second conductive material over the MIMCap dielectric within the second region trenches to form a MIMCap top plate.
Dependencies are inferred from the claim text.