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OwnerAlexandr Alexandrovich Blyablin, Alexandr Tursunovich Rakhimov +2inventors
InventorsAlexandr Alexandrovich Blyablin, Alexandr Tursunovich Rakhimov, Vladimir Anatolievich Samorodov, Nikolaii Vladislavovich Suetin
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The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant metal. The growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer. For producing a display structure, a control grid is obtained from the metal layer having an emission threshold higher than a field density at which the cathode emits the required current. The inventive method enables to avoid operations of removing the emission layer making it possible to produce flat displays having high characteristics in addition to high performance and low cost.
Method of producing an addressable field-emission cathode comprising fabrication on a dielectric substrate of a high temperature material of a structure of alternating discrete emitting elements which elements are produced by deposition on said dielectric substrate of the discrete metallic elements made from a high temperature metal, followed by deposition on them of the carbon containing emissive layer, wherein the carbon containing emissive layer is deposited by a method of gas phase synthesis comprising heating of metallic filaments of reactor and the substrate in the reactor in flow of hydrogen, admission of carbon containing gas into the said flow of hydrogen and conducting deposition through a protective meshed screen, and the deposition regime is selected to provide the growth rate of the emissive layer on the dielectric substrate being substantially less than growth rate on the metallic discrete elements.
Method of producing a display structure with triode control scheme comprising fabrication of anode structure made in the form of parallel discrete elements, fabrication on a dielectric substrate made from a high temperature material of the discrete parallel metallic elements of addressable field-emission cathode which elements are perpendicular to the said discrete elements of the anode structure and made from high temperature metal and provided with the contact pads, fabrication of a control grid placed between the addressable field-emission cathode and anode structure via deposition on the said discrete metallic elements of the addressable field-emission cathode, but excluding the contact pads, of a layer of dielectric and layer of a metal, opening the holes in the said layers of dielectric and above deposited metal in places of crossing of the discrete elements of the addressable field-emission cathode and anode structure, which holes are formed of the required shape and penetrate down to the discrete elements of the cathode, deposition of a carbon containing emissive layer, wherein on the dielectric layer a layer of metal is deposited which electrical field strength threshold for beginning of emission is higher than electrical field strength at which the required current is emitted by the cathode, and the carbon containing emissive layer is deposited on the said discrete elements of the addressable field-emission cathode via method of gas phase synthesis comprising heating of metallic filaments of the reactor and the dielectric substrate in the reactor in flow of hydrogen with admission of carbon containing gas into the said flow, conducting deposition through a protective meshed screen, and selecting deposition regime to provide growth rate of the carbon containing emissive layer on the dielectric substrate being substantially less than growth rate of the carbon containing emissive layer on the discrete metallic elements of the addressable auto-emission cathode.
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