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US 2003/0142571 A1Published application
Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used
AssigneeKabushiki Kaisha Toshiba
InventorsKazushige Kanda, Kenichi Imamiya, Hiroshi Nakamura, Ken Takeuchi, Tamio Ikehashi
Life of this patent
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Abstract
A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.
Claims43
A semiconductor device comprising:
- a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage;
- a second circuit for controlling the output from said first circuit by activation or deactivation;
- and
- an activation control circuit for activating or deactivating said second circuit in accordance with external input.
1 more element
A nonvolatile semiconductor memory comprising:
- a fuse data storage for storing fuse data including replacement data for replacing a first area with a second area in a memory cell array;
- a fuse data read unit for reading out the fuse data from said fuse data storage;
- a read control circuit which, when activated, outputs a control signal for reading out the fuse data to said fuse data read unit;
- and
- an activation control circuit for activating or deactivating said read control circuit in accordance with external input.
2 more elements
A semiconductor device comprising:
- an initialization control circuit for outputting an initialization signal for initializing a predetermined circuit;
- a first power-on reset circuit for outputting a first power-on reset signal when a power source voltage exceeds a first level;
- and
- a second power-on reset circuit for outputting a second power-on reset signal when the power source voltage exceeds a second level higher than the first level,
- wherein said initialization control circuit outputs the initialization signal when the second power-on reset signal is output after the power source is turned on, and, even if this second power-on reset signal is output again thereafter, does not output the initialization signal unless the first power-on reset signal is output again.
2 more elements
A nonvolatile semiconductor memory comprising:
- a fuse data storage for storing fuse data including replacement data for replacing a first area with a second area in a memory cell array;
- a fuse data read unit for reading out the fuse data from said fuse data storage;
- a read control circuit which, when activated, outputs a control signal for reading out the fuse data to said fuse data read unit;
- and
- an activation control circuit for controlling activation or deactivation of said read control circuit,
- wherein if a predetermined command is input for the first time, said activation control circuit interprets that this command is a command for reading out the fuse data, and activates said read control circuit, and, if the predetermined command is input for the second time or thereafter, said activation control circuit interprets that this command is not a command for reading out the fuse data, and deactivates said read control circuit.
3 more elements
Dependencies are inferred from the claim text.