Capacitive techniques to reduce noise in high speed interconnections

A method for forming integrated circuit lines, comprising:

• forming a first ground plane on a substrate;
• forming a first layer of insulating material on the first ground plane, wherein the first layer has a thickness of less than 1.0 micrometers (μm);
• forming a pair of electrically conductive lines on the first layer of insulating material;
• forming a pair of integrated circuit lines on the first layer of insulating material and between and parallel with the pair of electrically conductive lines;
• forming a second layer of insulating material on the pair of integrated circuit lines and the pair of electrically conductive lines, wherein the second layer of insulating material has a dielectric constant less than SiO2;
• and
• forming a second ground plane on the second layer of insulating material.

A method for forming transmission lines in a memory device, comprising:

• forming a first power plane on a substrate;
• forming a first layer of insulating material on the first power plane, wherein the first layer has a thickness of less than 1.0 micrometers (μm);
• forming a first transmission line on the first layer of insulating material, wherein the transmission line has a thickness and a width of approximately 1.0 μm;
• forming a second layer of insulating material on the first transmission line;
• and
• forming a second power plane on the second layer of insulating material.

A method of forming a memory device, the method comprising:

• forming a memory array;
• forming a number of sense amplifiers;
• and
• forming a number of transmission lines, wherein forming the number of sense amplifiers include coupling the number of sense amplifiers to the memory array through the number of transmission lines, and wherein forming the number of transmission lines includes:
• forming a first layer of electrically conductive material on a substrate;
• forming a first layer of insulating material on the first layer of the electrically conductive material, wherein the first layer has a thickness of less than 1.0 micrometers (μm);
• forming a transmission line on the first layer of insulating material, wherein the transmission line has a thickness and a width of approximately 1.0 micrometers;
• forming a second layer of insulating material on the transmission line;
• and
• forming a second layer of electrically conductive material on the second layer of insulating material.

A transmission line circuit, comprising:

• a bottom layer of electrically conductive material formed on a substrate;
• a layer of insulating material formed on the bottom layer of electrically conductive material, wherein the layer of insulating material has a thickness of less than 1.0 micrometers (μm);
• a pair of electrically conductive lines formed on the layer of insulating material;
• a transmission line formed on the layer of insulating material and between and parallel with the pair of electrically conductive lines;
• and
• a top layer of electrically conductive material formed on the layer of insulating material.

A differential line circuit in a Dynamic Random Access Memory (DRAM), comprising:

• a bottom ground plane formed on a substrate;
• a layer of insulating material formed on the bottom ground plane, wherein the layer of insulating material has a thickness of less than 1.0 micrometers (μm);
• a pair of electrically conductive lines formed in the layer of insulating material;
• a pair of differential signal lines formed in the layer of insulating material and between and parallel with the pair of electrically conductive lines;
• and
• a top ground plane formed on the layer of insulating material.

An electronic system comprising:

• a processor;
• and
• an integrated circuit coupled to the processor, the integrated circuit including:
• a bottom layer of electrically conductive material formed on a substrate;
• a layer of insulating material formed on the bottom layer of electrically conductive material, wherein the layer of insulating material has a thickness of less than 1.0 micrometers (μm);
• a pair of electrically conductive lines formed on the layer of insulating material;
• a transmission line formed on the layer of insulating material and between and parallel with the pair of electrically conductive lines;
• and
• a top layer of electrically conductive material formed on the layer of insulating material.