Semiconductor device and method for driving the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMichihito Ueda, Takashi Ohtsuka, Kiyoyuki Morita
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMichihito Ueda, Takashi Ohtsuka, Kiyoyuki Morita
Estimating the term…
A semiconductor device includes: a control-voltage supply unit 110; an MOS transistor including a gate electrode 109 and drain and source regions 103a and 103b; a dielectric capacitor 104; and a resistor 106. The dielectric capacitor 104 and the resistor 106 are disposed in parallel and interposed between the gate electrode 109 and the control-voltage supply unit 110. With this structure, a charge is accumulated in each of an intermediate electrode of the dielectric capacitor 104 and the gate electrode 109 upon the application of a voltage, thereby varying a threshold value of the MOS transistor. In this manner, the history of input signals can be stored as a variation in a drain current in the MOS transistor, thus allowing multilevel information to be held.
A semiconductor device comprising:
A semiconductor device, comprising:
A method for driving a semiconductor device including a control-voltage supply unit, a field-effect transistor including a gate electrode having a function of accumulating a charge, a capacitor, and a resistor, the capacitor and the resistor being disposed in parallel and interposed between the control-voltage supply unit and the gate electrode,
Dependencies are inferred from the claim text.