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US 2003/0142527 A1Published application
Memory device
AssigneeSanyo Electric Co., Ltd.
InventorKouichi Yamada
Life of this patent
Estimating the term…
Abstract
A memory device capable of rewriting data with smaller current consumption than a case of feeding a rewrite current every bit line is obtained. This memory device comprises a first bit line and a second bit line having a current path independently of the first bit line, and renders write current paths of the first and second bit lines in common. Thus, the memory device can rewrite data with smaller current consumption as compared with the case of feeding the rewrite current every bit line.
Claims19
A memory device comprising:
- a first bit line;
- and
- a second bit line having a current path independently of said first bit line,
- said memory device rendering write current paths of said first bit line and said second bit line in common.
1 more element
A memory device comprising:
- a first bit line;
- a first pair line paired with said first bit line;
- a second bit line;
- a second pair line paired with said second bit line;
- and
- a current path control circuit connecting either said first bit line or said first pair line and either said second bit line or said second pair line with each other in writing thereby connecting current paths of said first bit line and said second bit line with each other.
3 more elements
Dependencies are inferred from the claim text.