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AssigneeCanon Kabushiki Kaisha
InventorAkira Miyake
Estimating the term…
EUV exposure apparatus for transferring a pattern on a reticle to a wafer, includes an illumination optical system having a plurality of illumination system mirrors for directing EUV light to the reticle, and a projection optical system having a plurality of projection system mirrors for directing reflection light from the reticle to the wafer. In the illumination optical system, a reflection-type optical integrator is arranged to form a plurality of light source images with the light from the light source. The optical integrator has a pinhole to branch a part of the EUV light to an EUV-light intensity detector. A controller controls the amount of exposure based on the intensity of EUV light detected by the EUV-light intensity detector. In this manner, precision in measuring the intensity of exposure light is improved, and compensation control of the amount of exposure is appropriately performed.
An exposure apparatus, including an illumination optical system for directing light from a light source to a reticle and a projection optical system for directing light from the reticle to a substrate, for transferring a pattern on the reticle to the substrate, comprising:
10 The apparatus according to claim 8, wherein said illumination optical system includes a first mirror system which leads light from said light source to said optical integrator, and said mirror is arranged in a light path between said first mirror system and said optical integrator.
11 The apparatus according to claim 8, wherein said illumination optical system includes a second mirror system which leads light from said optical integrator to said reticle, and said mirror is arranged in a light path between said second mirror system and said optical integrator.
12 The apparatus according to claim 8, wherein said mirror is arranged in a place where incident light to said optical integrator crosses to reflected light from said optical integrator.
14 The apparatus according to claim 1, wherein said light source is an EUV light source.
A control method of an exposure apparatus, which includes an illumination optical system for directing light from a light source to a reticle and a projection optical system for directing light from the reticle to a substrate, for transferring a pattern on the reticle to the substrate, said method comprising:
18 The method according to claim 15, wherein the light source is an EUV light source.
Dependencies are inferred from the claim text.