Surface acoustic wave apparatus
AssigneeMurata Manufacturing Co., Ltd.
InventorsMichio Kadota, Takeshi Nakao
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Abstract
A surface acoustic wave apparatus has an improved frequency temperature characteristic due to an arrangement of a SiO2 film on an IDT such that cracks in the SiO2 film surface are prevented from occurring, desired characteristics are reliably achieved, the electromechanical coefficient is increased, and the attenuation constant α is reduced. The surface acoustic wave apparatus includes at least one IDT primarily including Cu and arranged on a 23° to 46°-rotated Y plate LiTaO3 substrate. The SiO2 film is arranged on the LiTaO3 substrate so as to cover the at least one IDT.
Claims13
A surface acoustic wave apparatus comprising:
- a LiTaO3 substrate having Euler angles of approximately (0±3°, 113° to 136°, 0±3°);
- at least one IDT which is arranged on the LiTaO3 substrate and which primarily includes Cu;
- and
- a SiO2 film arranged on the LiTaO3 substrate to cover the at least one IDT.
Dependencies are inferred from the claim text.