Plasma processing apparatus and method capable of performing uniform plasma treatment by control of excitation power
AssigneeAlps Electronic Co., Ltd.
InventorsAkira Nakano, Tadahiro Ohmi
Life of this patent
Estimating the term…
Abstract
A plasma processing apparatus includes a chassis accommodating an impedance matching circuit. The impedance matching circuit is placed between an RF generator and a plasma excitation electrode. Magnetic probes for detecting a magnetic field generated at a slit in a sidewall of the chassis are placed axisymmetrically. The plasma processing apparatus also includes a feedback circuit for feeding back to an RF generator or a matching circuit so that a current detected by a current-detecting unit maintains a predetermined value.
Claims20
A plasma processing apparatus, comprising:
- an electrode pair of a plasma excitation electrode for forming a plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be plasma-treated being placed therebetween;
- a plasma processing chamber accommodating the electrode pair;
- an RF generator;
- a feeding path for feeding RF power from the RF generator to the plasma excitation electrode;
- an impedance matching circuit placed in the feeding path, wherein the impedance matching circuit matches the impedance between the RF generator and the plasma processing chamber;
- a chassis accommodating the impedance matching circuit, wherein the chassis functions as part of a return path from the susceptor electrode to the RF generator;
- and
- current-detecting means for detecting an RF current which returns from the susceptor electrode to the RF generator, the current-detecting means being provided in the chassis.
A plasma processing apparatus, comprising:
- a plasma processing chamber having an electrode for exciting a plasma;
- an RF generator for supplying RF power to the electrode;
- a matching circuit for impedance matching between the plasma processing chamber and the RF generator, the matching circuit including an input terminal connected to the RF generator with an RF supplier therebetween and an output terminal connected to the electrode with an RF feeder therebetween, wherein a ground potential portion is connected between the input and output terminals;
- current-detecting means for monitoring a current flowing in the RF feeder;
- control means for controlling an output of the RF generator so that a current value detected by the current-detecting means maintains a predetermined value;
- and
- a feedback circuit for feeding back to the RF generator or the matching circuit a control signal from the control means to adjust the electric power applied to the electrode for exciting the plasma.
A plasma processing method using a plasma processing apparatus, comprising:
- performing a plasma treatment, while controlling electric power applied to an electrode for exciting a plasma to maintain a predetermined value.
A plasma processing apparatus, comprising:
- a plasma processing chamber accommodating a plasma excitation electrode and a susceptor electrode;
- an RF generator;
- a feeding path for feeding RF power from the RF generator to the plasma excitation electrode;
- an impedance matching circuit placed in the feeding path, wherein the impedance matching circuit matches the impedance between the RF generator and the plasma processing chamber;
- a chassis enclosing the impedance matching circuit, wherein the chassis functions as part of a return path from the susceptor electrode to the RF generator;
- and
- a current-detector configured to detect an RF current which returns from the susceptor electrode to the RF generator, the current-detector being provided in the chassis.
Dependencies are inferred from the claim text.