Method and apparatus for substrate processing

A plasma generating system, comprising:

• a first hollow member defining a first plasma current path;
• a second hollow member defining a second plasma current path and disposed about orthogonal with respect to the first hollow member;
• a first RF source disposed along a least a portion of the first hollow member and adapted to produce a first magnetic field within the first hollow member;
• a second RF source disposed along a least a portion of the second hollow member and adapted to produce a second magnetic field within the second hollow member;
• a first plasma shaping apparatus disposed at one end of the first hollow member;
• and
• a second plasma shaping apparatus disposed at one end of the second hollow member.

A method of substrate processing, comprising:

• flowing a first gas into a first plasma current path defined by a first hollow member located external to a processing region;
• applying power to a first antenna adjacent the first hollow member to inductively couple energy into the first gas to form a first plasma current generating a first plasma from the first gas;
• flowing the first plasma generating current across the processing region and through another end of the first hollow member to define a first closed plasma current path;
• and
• flowing a process gas through a showerhead into the processing region and forming a plasma of the process gas adjacent a substrate using the first plasma of the first gas.