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US 2003/0141788 A1Published application
Thin film, method for manufacturing thin film, and electronic component
AssigneeMurata Manufacturing Co., Ltd.
InventorsHajime Yamada, Masaki Takeuchi
Life of this patent
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Abstract
A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.
Claims16
A thin film comprising:
- an AlN material provided on a surface of a substrate, wherein the crystallinity is the C axis preferred orientation, the half-width of a rocking curve is about 1.4° to about 1.6°, and an internal stress is within the range of approximately ±1 GPa.
An electronic component comprising:
- a substrate;
- and
- a thin film disposed on the substrate and made of an AlN material, wherein the crystallinity is the C axis preferred orientation, the half-width of a rocking curve is about 1.4° to about 1.6°, and an internal stress is within the range of approximately ±1 GPa.
A method for manufacturing a thin film comprising the steps of:
- providing a substrate;
- and
- forming a thin film on the substrate using a mixed gas of Ar and nitrogen such that the thin film includes an AlN material, wherein the crystallinity is the C axis preferred orientation, the half-width of a rocking curve is about 1.4° to about 1.6°, and an internal stress is within the range of approximately ±1 GPa;
- wherein said mixed gas has a nitrogen flow rate ratio of about 10% to about 75%, wherein the nitrogen flow rate is a ratio of a nitrogen flow rate relative to the sum of an Ar flow rate and the nitrogen flow rate.
1 more element
Dependencies are inferred from the claim text.